GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel

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Name: GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel
Brand: TOSHIBA
Price: 1 USD

Brand Name : TOSHIBA

Model Number : GT20J101

Place of Origin : CHINA

MOQ : 10 PCS

Price : Negotiation

Payment Terms : T/T, Western Union ， ESCROW

Supply Ability : 10000PCS

Delivery Time : STOCK

Packaging Details : TUBE

VCES : 600V

VGES : +-20

IC : 20A

ICP : 40A

PC : 130W

Tj : 150°C

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GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

High Power Switching Applications

• The 3rd Generation • Enhancement-Mode

• High Speed: tf = 0.30 µs (max)

• Low Saturation Voltage: VCE (sat) = 2.7 V (max)

Characteristic	Symbol	Rating	Unit
Collector-emitter voltage	VCES	600	V
Gate-emitter voltage	VGES	+-20	V
Collector current DC	IC	20	A
Collector current 1 ms	ICP	40	A
Collector power dissipation (Tc = 25°C)	PC	130	W
Junction temperature	Tj	150	°C
Storage temperature range	Tstg	−55~150	°C

GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel

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Email:sales3@deli-ic.com
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TEL:86-755-82539981

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insulated gate bipolar

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